Integra Technologies’ IGN1011L120 IFF avionics transistor provides 120W of peak output power using GaN/SiC technology. Designed for IFF avionic applications, the device is specified for use under Class AB operation.
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The transistor operates at frequencies ranging from1.03 GHz to 1.09 GHz and delivers the 120W of peak pulse power at 50V bias and 6.4% duty factor. Assembled via chip and wire technology with gold metallization, the device is housed in a metal-based package and sealed with a ceramic-epoxy lid. Other features include 17 dB of gain and a drain efficiency of 75% at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4% duty cycle.
To learn more, take a gander at the IGN1011L120 datasheet.